SK hynix and NVIDIA Partner to Develop Next-Gen AI NAND Solutions

SK hynix Announces Deep Collaboration with NVIDIA to Develop Next-Generation AI NAND Solutions

SK hynix has announced a deep collaboration with NVIDIA to jointly develop next-generation AI NAND solutions, aiming to address the long-standing bottleneck between AI computation and storage.

This breakthrough product is expected to release its first samples by the end of 2026, delivering performance improvements nearly tenfold compared to current offerings.

At the “2025 Artificial Intelligence Semiconductor Future Technology Conference (AISFC),” SK hynix Vice President Kim Cheon-seong stated that the company is focusing on developing high-value AI memory products tailored to the diverse needs of data centers and edge computing.

In the AI data center field, SK hynix is building a product line called the “AIN Family,” consisting of three NAND solutions optimized for different priorities: performance (AI-NP), bandwidth (AI-NB), and capacity (AI-ND).

Among them, AI-NP is the core solution designed for large-scale AI inference environments. Its goal is to minimize the data bottleneck between AI computation and storage through a brand-new NAND and controller architecture, thereby significantly improving processing speed and energy efficiency.

Kim Cheon-seong revealed that SK hynix is accelerating collaboration with NVIDIA on AI-NP concept validation. The first version, expected by the end of 2026, will adopt a PCIe Gen 6 interface and support 25 million IOPS.

Currently, high-performance enterprise SSDs in data centers reach a maximum of around 3 million IOPS. In other words, the first AI-NP samples will deliver 8 to 10 times the performance of existing products.

SK hynix anticipates mass production of the second-generation AI-NP product by the end of 2027, supporting 100 million IOPS, with performance expected to exceed existing enterprise SSDs by more than 30 times.

Beyond AI-NP, SK hynix is also optimizing the AI-NB product, a high-bandwidth flash (HBF). Its concept is similar to HBM memory, but while HBM is manufactured by stacking DRAM, HBF is created by stacking NAND flash.